Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

摘要

The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22 ± 0.04)m0. The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution.